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Journal of Vacuum Science & Technology B - AIP Publishing LLC
Journal of Vacuum Science & Technology B - AIP Publishing LLC

HSQ - Nanolithography
HSQ - Nanolithography

Atomic relocation processes in impurity-free disordered p -GaAs epilayers  studied by deep level transient spectroscopy
Atomic relocation processes in impurity-free disordered p -GaAs epilayers studied by deep level transient spectroscopy

Properties of Mn- and Co-doped bulk ZnO crystals
Properties of Mn- and Co-doped bulk ZnO crystals

Journal of Vacuum Science and Technology B
Journal of Vacuum Science and Technology B

Growth and characterization of germanium epitaxial film on silicon (001)  with germane precursor in metal organic chemical vapour deposition (MOCVD)  chamber – topic of research paper in Materials engineering. Download  scholarly article
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber – topic of research paper in Materials engineering. Download scholarly article

Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and  observation of Fowler-Nordheim tunneling
Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and observation of Fowler-Nordheim tunneling

PDF) Study of the NF3 plasma cleaning of reactors for amorphous silicon  deposition | Giovanni Bruno - Academia.edu
PDF) Study of the NF3 plasma cleaning of reactors for amorphous silicon deposition | Giovanni Bruno - Academia.edu

Inhomogeneous electronic states in superconductors (Chapelier, Ioffe) How  to disentangle the unavoidable atomic level inhomogeneity of real materials  from. - ppt download
Inhomogeneous electronic states in superconductors (Chapelier, Ioffe) How to disentangle the unavoidable atomic level inhomogeneity of real materials from. - ppt download

Layer-by-layer nanometer scale etching of two-dimensional substrates using  the scanning tunneling microscope | Journal of the American Chemical Society
Layer-by-layer nanometer scale etching of two-dimensional substrates using the scanning tunneling microscope | Journal of the American Chemical Society

PDF) Monte Carlo calculations of the beam flux distribution from  molecular-beam epitaxy sources
PDF) Monte Carlo calculations of the beam flux distribution from molecular-beam epitaxy sources

Practical approach to modeling e-beam lithographic process from SEM images  for minimization of line edge roughness and critical
Practical approach to modeling e-beam lithographic process from SEM images for minimization of line edge roughness and critical

Cu film thermal stability on plasma cleaned polycrystalline Ru
Cu film thermal stability on plasma cleaned polycrystalline Ru

Morphologic and electronic changes induced by thermally supported hydrogen  cleaning of GaAs (110) facets
Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs (110) facets

A synchrotron beamline for extreme-ultraviolet photoresist testing
A synchrotron beamline for extreme-ultraviolet photoresist testing

Fabrication of nanodamascene metallic single electron transistors with  atomic layer deposition of tunnel barrier
Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

Conduction mechanisms and charge storage in Si-nanocrystals  metal-oxide-semiconductor memory devices studied with conducting atomic  force microscopy – topic of research paper in Nano-technology. Download  scholarly article PDF and read for free on
Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy – topic of research paper in Nano-technology. Download scholarly article PDF and read for free on

Reduction of exposing time in massively-parallel E-beam systems
Reduction of exposing time in massively-parallel E-beam systems

PDF] Direct detection and imaging of low-energy electrons witk delta-doped  charge-coupled devices | Semantic Scholar
PDF] Direct detection and imaging of low-energy electrons witk delta-doped charge-coupled devices | Semantic Scholar

Solved 1,0 Helium ion exposure 0.8 3. (25 pts) The right | Chegg.com
Solved 1,0 Helium ion exposure 0.8 3. (25 pts) The right | Chegg.com

Electron-stimulated desorption from polished and vacuum fired 316LN  stainless steel coated with Ti-Zr-Hf-V – topic of research paper in  Materials engineering. Download scholarly article PDF and read for free on  CyberLeninka open
Electron-stimulated desorption from polished and vacuum fired 316LN stainless steel coated with Ti-Zr-Hf-V – topic of research paper in Materials engineering. Download scholarly article PDF and read for free on CyberLeninka open

PDF) Sub-150 nm, high-aspect-ratio features using near-field phase-shifting  contact lithography | Mark Horn - Academia.edu
PDF) Sub-150 nm, high-aspect-ratio features using near-field phase-shifting contact lithography | Mark Horn - Academia.edu

Ex situ Lift Out of PFIB Prepared TEM Specimens | Microscopy and  Microanalysis | Cambridge Core
Ex situ Lift Out of PFIB Prepared TEM Specimens | Microscopy and Microanalysis | Cambridge Core

PDF) Suppression of the base-collector leakage current in integrated  Si/SiGe heterojunction bipolar transistors
PDF) Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors

Impurity reduction in In 0.53 Ga 0.47 As layers grown by liquid phase  epitaxy using Er- treated melts
Impurity reduction in In 0.53 Ga 0.47 As layers grown by liquid phase epitaxy using Er- treated melts