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Journal of Vacuum Science & Technology B - AIP Publishing LLC
HSQ - Nanolithography
Atomic relocation processes in impurity-free disordered p -GaAs epilayers studied by deep level transient spectroscopy
Properties of Mn- and Co-doped bulk ZnO crystals
Journal of Vacuum Science and Technology B
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber – topic of research paper in Materials engineering. Download scholarly article
Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and observation of Fowler-Nordheim tunneling
PDF) Study of the NF3 plasma cleaning of reactors for amorphous silicon deposition | Giovanni Bruno - Academia.edu
Inhomogeneous electronic states in superconductors (Chapelier, Ioffe) How to disentangle the unavoidable atomic level inhomogeneity of real materials from. - ppt download
Layer-by-layer nanometer scale etching of two-dimensional substrates using the scanning tunneling microscope | Journal of the American Chemical Society
PDF) Monte Carlo calculations of the beam flux distribution from molecular-beam epitaxy sources
Practical approach to modeling e-beam lithographic process from SEM images for minimization of line edge roughness and critical
Cu film thermal stability on plasma cleaned polycrystalline Ru
Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs (110) facets
A synchrotron beamline for extreme-ultraviolet photoresist testing
Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
Conduction mechanisms and charge storage in Si-nanocrystals metal-oxide-semiconductor memory devices studied with conducting atomic force microscopy – topic of research paper in Nano-technology. Download scholarly article PDF and read for free on
Reduction of exposing time in massively-parallel E-beam systems
PDF] Direct detection and imaging of low-energy electrons witk delta-doped charge-coupled devices | Semantic Scholar
Solved 1,0 Helium ion exposure 0.8 3. (25 pts) The right | Chegg.com
Electron-stimulated desorption from polished and vacuum fired 316LN stainless steel coated with Ti-Zr-Hf-V – topic of research paper in Materials engineering. Download scholarly article PDF and read for free on CyberLeninka open
PDF) Sub-150 nm, high-aspect-ratio features using near-field phase-shifting contact lithography | Mark Horn - Academia.edu
Ex situ Lift Out of PFIB Prepared TEM Specimens | Microscopy and Microanalysis | Cambridge Core
PDF) Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors
Impurity reduction in In 0.53 Ga 0.47 As layers grown by liquid phase epitaxy using Er- treated melts